Electron conduction through quasi-one-dimensional indium wires on silicon
نویسندگان
چکیده
منابع مشابه
Conductance distributions in quasi-one-dimensional disordered wires.
A detailed analysis of the distribution of conductances P(g) of quasi-one-dimensional disordered wires in the metal-insulator crossover is presented. P(g) obtained from a Monte Carlo solution of the Dorokhov, Mello, Pereyra, and Kumar (DMPK) scaling equation is in full agreement with "tight-binding" numerical calculations of bulk disordered wires. Perturbation theory is shown to be valid even f...
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We report measurements of the compressibility of a one-dimensional quantum wire, defined in the upper well of a GaAs/AlGaAs double quantum well heterostructure. A wire defined simultaneously in the lower well probes the ability of the upper wire to screen the electric field from a biased surface gate. The technique is sensitive enough to resolve spin splitting of the subbands in the presence of...
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We determine analytically the distribution of conductances of quasi onedimensional disordered electron systems, neglecting electron-electron interaction, for all strengths of disorder. We find that in the crossover region between the metallic and insulating regimes, P (g) is highly asymmetric, given by “one-sided” log-normal distribution. For larger disorder, the tail of the log-normal distribu...
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Spatial intensity correlations between waves transmitted through random media are analyzed within the framework of the random matrix theory of transport. Assuming that the statistical distribution of transfer matrices is isotropic, we found that the spatial correlation function can be expressed as the sum of three terms, with distinctive spatial dependences. This result coincides with the one o...
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Upon increasing the electron density in a quantum wire, the one-dimensional electron system undergoes a transition to a quasi-one-dimensional state. In the absence of interactions between electrons, this corresponds to filling up the second subband of transverse quantization, and there are two gapless excitation modes above the transition. On the other hand, strongly interacting one-dimensional...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2002
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1483929